| All returns accepted | ReturnsNotAccepted |
|---|---|
| Mounting Style | Through-Hole |
| Collector-Emitter Voltage | 300 V |
| Configuration | Single |
| Maximum Collector-Base Voltage | 300 V |
| Maximum Base-Emitter Voltage | 5 V |
| Number of Elements per Chip | 1 |
| Collector-Base/Gate-Source Voltage | 300 V |
| Package/Case | TO-202 |
| MPN | MPSU60 |
| Transistor Category | Power Transistor |
| Minimum Operating Temperature | -65 °C (-85 °F) |
| Collector-Emitter/Drain-Source Voltage | 300 V |
| Brand | Motorola |
| Continuous Collector/Drain Current | 500 mA |
| Type | PNP |
| Transistor Type | PNP |
| Maximum DC Collector Current | 500 mA |
| Model | MPSU60 |
| Maximum Power Dissipation | 10 W |
| Packaging | Bag |
| Number of Pins | 3 |
| Maximum Operating Frequency | 60 MHz |
| Maximum Operating Temperature | 150 °C (302 °F) |
| Emitter-Base/Gate-Drain Voltage | 4V |
Check the listing for details. MPSU60 PNP Transistor Motorola NOS Qty(1). Condition: New – Open box. Listed at 10.00 USD. MPSU60 PNP Transistor Motorola NOSQty(1) Please find the MPSU10 NPN mates to these in my store Condition: NOS Sold as is no returns Happy to answer any questions MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITSCollector-Base Voltage VCBO 300 VCollector-Emitter Voltage VCEO 300 VEmitter-Base Voltage VEBO 5.0 VContinuous Collector Current IC 0.5 APower Dissipation PD 1.75 WPower Dissipation (TC=25°C) PD 10 WOperating and Storage Junction Temperature TJ, Tstg -65 to +150 °CThermal Resistance ΘJA 70 °C/WThermal Resistance ΘJC 12.5 °C/WELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)SYMBOL TEST CONDITIONS MIN MAX UNITSICBO VCB=200V 200 nAIEBO VEB=3.0V 100 nABVCBO IC=100μA 300 VBVCEO IC=1.0mA 300 VBVEBO IE=10μA 5.0 VVCE(SAT) IC=20mA, IB=2.0mA 0.75 VVBE(SAT) IC=20mA, IB=2.0mA 0.90 VhFE VCE=10V, IC=1.0mA 25hFE VCE=10V, IC=10mA 30hFE VCE=10V, IC=30mA 30fT VCE=20V, IC=10mA, f=100MHz 60 MHzCob VCB=20V, IE=0, f=1.0MHz 8.0 pF FAST FREE USA SHIPPING!
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